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• DV Voltage – 200mV 0.1mV ±1.2% of rdg + 5 digits – 2V 1mV ±1.2% of rdg + 5 digits – 20V 10mV ±1.2% of rdg + 5 digits – 200V 100mV ±1.2% of rdg + 5 digits – 1000V 1V ±1.5% of rdg + 5 digits
• DV Current – 2mA 1µA ±1.5% of rdg + 5 digits – 200mA 10µA ±2% of rdg + 5 digits – 20A 10mA ±3% of rdg + 5 digits
• AC Voltage – 200mV 0.1mV ±2% of rdg + 5 digits – 2V 1mV ±1.8 of rdg + 5 digits – 20V 10mV ±1.5 of rdg + 5 digits – 200V 1000mV ±1.5 of rdg + 5 digits – 750V 1V ±2% of rdg + 7 digits
• AC Current – 2mA 1µA ±2% of rdg + 5digits – 200mA 100µA ±2.5% of rdg+ 5digits – 20A 10mA ±3% of rdg+ 7digits
• Resistance Range Resolution Accuracy 200Ω 0.1Ω ±（1.5%+5） 2KΩ 1Ω 20KΩ 10Ω 200KΩ 100Ω 2MΩ 1KΩ 20MΩ 10KΩ ±（2%+5） 200MΩ 100KΩ ±（5%+5）-10
• Capacitance Range Resolution Accuracy 20nF 10pF 200nF 100pF ±（3%+10） 2μF 1nF 200μF 10nF ±（5%+10）
• Transistor hFE Test Range Description Measuring Condition hFE Display： 0～1000β Ibo≈10μA, Vce≈2.8V